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Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer

Lookup NU author(s): John Varzgar, Dr Sanatan Chattopadhyay, Dr Suresh Uppal, Dr Sarah Olsen, Professor Anthony O'Neill

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Author(s): Varzgar JB, Chattopadhyay S, Uppal S, Chandra P, Olsen SH, O'Neill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: European Materials Research Society Conference (E-MRS)

Year of Conference: 2006

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