Browse by author
Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Professor Nick Wright
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AlN single crystals with a thickness up to 400 μm and low dislocation density. © (2010) Trans Tech Publications.
Author(s): Yazdi G, Vassilevski K, Córdoba J, Gogova D, Nikitina I, Syväjärvi M, Odén M, Wright N, Yakimova R
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science Forum: Silicon Carbide and Related Materials 2009
Year of Conference: 2010
Pages: 1187-1190
ISSN: 0255-5476 (print) 1422-6375 (online)
Publisher: Trans Tech Publications Ltd.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.1187
DOI: 10.4028/www.scientific.net/MSF.645-648.1187
Library holdings: Search Newcastle University Library for this item
ISBN: 0878492798
