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Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

Lookup NU author(s): Arup Saha, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

Based on the interfacial-layer and quantum-mechanical (QM) carrier transport approach, a theoretical model is proposed to predict the anomalous behavior of low-temperature current-voltage (I-V) characteristics of Ti-silicided Schottky diodes. Physical parameters such as barrier height, ideality factor, series resistance, and effective Richardson constant of silicided Schottky diodes are extracted from the forward experimental I-V characteristics. Simulations of both the forward and reverse I-V characteristics have also been performed using extracted parameters. Results are compared with the models, such as, thermionic-emission-diffusion and thermionic-emission with barrier lowering reported in the literature. It is shown that for Ti-silicided Schottky diodes, the use of QM transport model provides a better agreement with the experimental data. © 2006 American Institute of Physics.

Publication metadata

Author(s): Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Bose C, Maiti CK

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2006

Volume: 99

Issue: 11

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2200450

DOI: 10.1063/1.2200450

Notes: Article no. 113707 6 pages

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