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Browsing publications by Layi Alatise.

Newcastle AuthorsTitleYearFull text
Dr Haimeng Wu
Dr Xiang Wang
Layi Alatise
Professor Volker Pickert
Investigation into the switching transient of SiC MOSFET using voltage/current source gate driver2020
Dr Haimeng Wu
Dr Xiang Wang
Professor Volker Pickert
Layi Alatise
Optimisation of the gate voltage in SiC MOSFETs: Efficiency vs reliability2020
Layi Alatise
Dr Sarah Olsen
Professor Anthony O'Neill
Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks2010
Layi Alatise
Dr Sarah Olsen
Professor Anthony O'Neill
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics2010
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs2010
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter2009
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter2009
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Improved Analog Performance of Strained Si n-MOSFETs on Thin SiGe Strained Relaxed Buffers2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
Layi Alatise
Rouzet Agaiby
et al.
Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs2007