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Browsing publications by Rouzet Agaiby.

Newcastle AuthorsTitleYearFull text
Rouzet Agaiby
Dr Sarah Olsen
Professor Anthony O'Neill
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices2010
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Nanometer strain profiling through Si/SiGe quantum layers2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Dr Yuk Tsang
Rouzet Agaiby
et al.
Nanoscale strain characterisation in patterned SSOI structures2008
Professor Anthony O'Neill
Rouzet Agaiby
Dr Sarah Olsen
Yang Yang
Reduced self-heating by strained silicon substrate engineering2008
Dr Sarah Olsen
John Varzgar
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Dr Piotr Dobrosz
et al.
Strain engineering for high mobility channels2008
Professor Anthony O'Neill
Dr Sarah Olsen
Yang Yang
Rouzet Agaiby
[invited] Engineering Self-Heating by Strained Silicon Technology2007
Rouzet Agaiby
Yang Yang
Dr Sarah Olsen
Professor Anthony O'Neill
Quantifying self-heating effects in strained Si MOSFETs with scaling2007
Professor Anthony O'Neill
Dr Sarah Olsen
Yang Yang
Rouzet Agaiby
Reduced self-heating by strained Si substrate engineering2007
Professor Anthony O'Neill
Dr Sarah Olsen
Yang Yang
Rouzet Agaiby
Reduced Self-Heating by Strained Silicon Substrate Engineering2007
Dr Sarah Olsen
Rouzet Agaiby
Dr Enrique Escobedo-Cousin
Professor Anthony O'Neill
Strained Si/SiGe MOS technology: improving gate dielectric integrity2007
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
Layi Alatise
Rouzet Agaiby
et al.
Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.
Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices2006
Dr Sarah Olsen
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Rimoon Agaiby
et al.
Strain characterisation in advanced Si devices2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rouzet Agaiby
et al.
Strained silicon technology2006
Dr Sarah Olsen
Professor Steve Bull
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
et al.
Thermal stability of thin virtual substrates for high performance devices2006