Browsing publications by Goutan Dalapati

Newcastle AuthorsTitleYear
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage characteristics in strained Si MOSFETs2006
Dr Sarah Olsen
Dr Mehdi Kanoun
Mohamed Al-Areeki
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage in strained Si MOSFETs2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of Gate Leakage in Strained Si MOSFETs2006
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.
Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Yuk Tsang
et al.
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs2006
Goutan Dalapati
Leakage current characteristics and the energy band diagram of Al/ZrO 2/Si0.3Ge0.7 hetero-MIS structures2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Yuriy Butenko
Dr Lidija Siller
Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers2006
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