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Browsing publications by Dr Sarah Olsen.

Newcastle AuthorsTitleYearFull text
Dr Jesus Urresti Ibanez
Dr Sarah Olsen
Professor Nick Wright
Professor Anthony O'Neill
Design and Analysis of High Mobility Enhancement Mode 4H-SiC MOSFETs Using a Thin SiO2 / Al2O3 Gate Stack2019
Professor Anthony O'Neill
Faiz Arith
Dr Jesus Urresti Ibanez
Dr Konstantin Vasilevskiy
Professor Nick Wright
et al.
High Mobility 4H-SiC MOSFET2018
Faiz Arith
Dr Jesus Urresti Ibanez
Dr Konstantin Vasilevskiy
Dr Sarah Olsen
Professor Nick Wright
et al.
High mobility 4H-SiC MOSFET using a thin SiO2/Al2O3 gate stack2018
Faiz Arith
Dr Jesus Urresti Ibanez
Dr Konstantin Vasilevskiy
Dr Sarah Olsen
Professor Nick Wright
et al.
Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack2018
Dr Sarah Olsen
Professor Anthony O'Neill
Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures2018
Sherko Ghaderi
Khalil Hassan
Dr Xiao Han
Dr Jiabin Wang
Professor Lidija Siller
et al.
Thermoelectric characterization of nickel-nanowires and nanoparticles embedded in silica aerogels2018
Muhsien Yazid
Dr Sarah Olsen
Dr Glynn Atkinson
Nucleation regions and coercivity determination of sintered Nd-Fe-B magnets2017
Muhsien Yazid
Dr Sarah Olsen
Dr Glynn Atkinson
MFM study of a sintered Nd-Fe-B magnet: analysing domain structure and measuring defect size in 3D view2016
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
Professor Jean-Pierre Raskin
Roughness analysis in strained silicon-on-insulator wires and films2014
Sergej Makovejev
Dr Sarah Olsen
Professor Jean-Pierre Raskin
Time and Frequency Domain Characterization of Transistor Self-Heating2013
Sergej Makovejev
Dr Sarah Olsen
Professor Jean-Pierre Raskin
Improvement of High-Frequency FinFET Performance by Fin Width Engineering2012
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Jean-Pierre Raskin
On-chip tensile testing of nanoscale silicon free-standing beams2012
Ferran Ureña Begara
Dr Sarah Olsen
Professor Lidija Siller
Professor Jean-Pierre Raskin
Strain in silicon nanowire beams2012
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Jean-Pierre Raskin
Experimental observations of surface roughness in uniaxially loaded strained Si microelectromechanical systems-based structures2011
Raman Kapoor
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Steve Bull
Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices2011
Sergej Makovejev
Dr Sarah Olsen
Professor Jean-Pierre Raskin
RF Extraction of Self-Heating Effects in FinFETs2011
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Steve Bull
Characterising gate dielectrics in high mobility devices using novel nanoscale techniques2010
Rouzet Agaiby
Dr Sarah Olsen
Professor Anthony O'Neill
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices2010
Layi Alatise
Dr Sarah Olsen
Professor Anthony O'Neill
Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks2010
Layi Alatise
Dr Sarah Olsen
Professor Anthony O'Neill
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics2010
Sergej Makovejev
Dr Sarah Olsen
Professor Jean-Pierre Raskin
Self-heating effect characterisation in SOI FinFETs2010
Dr Piotr Dobrosz
Dr Sarah Olsen
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs2010
Dr Piotr Dobrosz
Dr Sarah Olsen
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs2010
Dr Stefan Persson
Mouhsine Fjer
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Strained-Silicon Heterojunction Bipolar Transistor2010
Dr Piotr Dobrosz
Dr Sarah Olsen
The High-Mobility Bended n-Channel Silicon Nanowire Transistor2010
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs2010
Liang Yan
Dr Sarah Olsen
Professor Anthony O'Neill
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack2009
Dr Sarah Olsen
3D analysis of strain in an electrically measured strained SiGe MOSFET2009
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter2009
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
Defect identification in strained Si/SiGe heterolayers for device applications2009
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter2009
Dr Piotr Dobrosz
Dr Sarah Olsen
Investigation of oxidation-induced strain in a top-down Si nanowire platform2009
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs2009
Dr Sarah Olsen
Professor Nick Cowern
Professor Anthony O'Neill
Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks2009
Dr Sarah Olsen
Liang Yan
Dr Enrique Escobedo-Cousin
Professor Anthony O'Neill
Strained Si/SiGe MOS technology: Improving gate dielectric integrity2009
Lisa Sanderson
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Tip enhanced Raman spectroscopy for high resolution assessment of strained silicon devices2009
Dr Stefan Persson
Mouhsine Fjer
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates2008
Layi Alatise
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Improved Analog Performance of Strained Si n-MOSFETs on Thin SiGe Strained Relaxed Buffers2008
Liang Yan
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
Professor Anthony O'Neill
Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates2008
Dr Sarah Olsen
Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors2008
Professor Anthony O'Neill
Dr Sarah Olsen
Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Investigation of Strain Profile Optimization in gate-all-around suspended silicon nanowire FET2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Nanometer strain profiling through Si/SiGe quantum layers2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Dr Yuk Tsang
Rouzet Agaiby
et al.
Nanoscale strain characterisation in patterned SSOI structures2008
Professor Anthony O'Neill
Dr Yuk Tsang
Dr Barry Gallacher
Dr Sarah Olsen
Piezomobility description of strain-induced mobility2008
Professor Anthony O'Neill
Rouzet Agaiby
Dr Sarah Olsen
Yang Yang
Reduced self-heating by strained silicon substrate engineering2008
Dr Sarah Olsen
John Varzgar
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Dr Piotr Dobrosz
et al.
Strain engineering for high mobility channels2008
Professor Andrew Houlton
Dr Ben Horrocks
Professor Nick Wright
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Top down and Bottom-up Routes to Nanoscale Electronic Components2008
Dr Yuk Tsang
Professor Anthony O'Neill
Dr Barry Gallacher
Dr Sarah Olsen
Using piezoresistance model with C-R conversion for modeling of strain-induced mobility2008
Professor Anthony O'Neill
Dr Sarah Olsen
Yang Yang
Rouzet Agaiby
[invited] Engineering Self-Heating by Strained Silicon Technology2007
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress2007
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2007
Dr Sarah Olsen
Increased flicker noise with increasing Ge concentration in the virtual substrate of strained Si surface channel n-MOSFETs2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al.
Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures2007
Dr Sarah Olsen
Nanoscale characterisation and modelling2007
Rouzet Agaiby
Yang Yang
Dr Sarah Olsen
Professor Anthony O'Neill
Quantifying self-heating effects in strained Si MOSFETs with scaling2007
Rimoon Agaiby
Yang Yang
Dr Sarah Olsen
Professor Anthony O'Neill
Quantifying self-heating effects with scaling in globally strained Si MOSFETs2007
Professor Anthony O'Neill
Dr Sarah Olsen
Rimoon Agaiby
Reduced self-heating by strained Si substrate engineering2007
Professor Anthony O'Neill
Dr Sarah Olsen
Yang Yang
Rouzet Agaiby
Reduced self-heating by strained Si substrate engineering2007
Professor Anthony O'Neill
Dr Sarah Olsen
Yang Yang
Rouzet Agaiby
Reduced Self-Heating by Strained Silicon Substrate Engineering2007
Dr Sarah Olsen
Strained SI/SiGe MOS Technology2007
Dr Sarah Olsen
Rouzet Agaiby
Dr Enrique Escobedo-Cousin
Professor Anthony O'Neill
Strained Si/SiGe MOS technology: improving gate dielectric integrity2007
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
Professor Anthony O'Neill
Strained Si/SiGe MOS technology: Improving gate dielectric integrity2007
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
Layi Alatise
Rouzet Agaiby
et al.
Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs2007
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers2007
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage characteristics in strained Si MOSFETs2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of Gate Leakage in Strained Si MOSFETs2006
Dr Sarah Olsen
Dr Mehdi Kanoun
Mohamed Al-Areeki
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage in strained Si MOSFETs2006
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.
Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices2006
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
Dr Johan Seger
et al.
Control of self-heating in thin virtual substrate strained Si MOSFETs2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
Rimoon Agaiby
Professor Steve Bull
et al.
Device related characterisation techniques for Si/SiGe heterostructures2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Professor Anthony O'Neill
Gate leakage mechanisms in strained Si devices2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer2006
John Varzgar
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer2006
Dr Suresh Uppal
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation2006
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Yuk Tsang
et al.
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs2006
Rimoon Agaiby
Professor Anthony O'Neill
Dr Sarah Olsen
Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling2006
Rimoon Agaiby
Professor Anthony O'Neill
Dr Sarah Olsen
Quantifying self-heating effects in strained Si MOSFETs with scaling2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
Dr Sarah Olsen
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Rimoon Agaiby
et al.
Strain characterisation in advanced Si devices2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si MOSFETs using thin virtual substrates2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si technology2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Strained Si/SiGe MOS technology2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rouzet Agaiby
et al.
Strained silicon technology2006
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Steve Bull
Professor Anthony O'Neill
Structuralstability of strained Si layers on thin strain-relaxed buffers for high performance MOSFETs2006
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Steve Bull
Professor Anthony O'Neill
Study of surface roughness and dislocation generation in strained Si layers grown on thin strain-relaxed buffers for high performance MOSFETs2006
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
The relationship between strain generation and relaxation, composition and electrical performance in strained Si/SiGe MOS technology2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface2006
Dr Sarah Olsen
Professor Steve Bull
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
et al.
Thermal stability of thin virtual substrates for high performance devices2006
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Sian Evans
X-ray studies of strained-Si heterostructures2006
Dr Sarah Olsen
Professor Anthony O'Neill
A study of SiGe/Si n-MOSFET processed and unprocessed channel layers using FIB and TEM methods2005
Professor Anthony O'Neill
Dr Sarah Olsen
Advancing strained silicon2005
Professor Steve Bull
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Assessment of strained silicon/SiGe with different architectures by Raman spectroscopy2005
Rimoon Agaiby
Professor Anthony O'Neill
Dr Sarah Olsen
Design considerations for strained Si/SiGe deep submicron dual-channel CMOS using high thermal budgets2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Doubling speed using strained Si/SiGe CMOS technology2005
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Goutan Dalapati
et al.
Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness2005
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture2005
Dr Sarah Olsen
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Professor Steve Bull
Professor Anthony O'Neill
et al.
Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs2005
Rudra Dhar
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
et al.
Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates2005
Professor Steve Bull
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices2005
Dr Sarah Olsen
Professor Anthony O'Neill
Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures2005
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
Dr Jie Zhang
et al.
Strained Si/SiGe CMOS: high performance without re-tooling2005
Dr Sarah Olsen
Professor Anthony O'Neill
Strained-Si NMOSFETs on thin 200 nm virtual substrates2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Piotr Dobrosz
Professor Steve Bull
Luke Driscoll
et al.
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors2005
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures2005
Dr Sarah Olsen
Professor Anthony O'Neill
3D determination of a MOSFET gate morphology by FIB tomography2004
Dr Sarah Olsen
Dr Kelvin Kwa
Luke Driscoll
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Design, fabrication and characterisation of strained Si/SiGe MOS transistors2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Evaluation of strained Si/SiGe material for high performance CMOS2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Evaluation of strained Si/SiGe material for high performance CMOS2004
Lynn Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of Relaxation in Strained Silicon by Grazing Incidence In-plane X-ray Diffraction2004
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of relaxation in strained silicon by grazing incidence in-plane x-ray diffraction2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the Residual Macro and Microstrain in Strained Si/SiGe using Raman Spectroscopy Z Metal2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual strain in strained Si/SiGe using Raman spectroscopy2004
Dr Sarah Olsen
Professor Anthony O'Neill
Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures2004
Dr Sarah Olsen
Professor Anthony O'Neill
Luke Driscoll
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
et al.
Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Jun Zhang
Si-Based Heterojunctions and Strained Si: Growth, Characterization and Applications2004
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges2004
Dr Sarah Olsen
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
et al.
Strained Si/SiGe n-channel MISFETs2004
Dr Sarah Olsen
Professor Anthony O'Neill
Strained-Si n-MOS surface-channel and buried Si0.7Ge 0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Luke Driscoll
Dr Kelvin Kwa
et al.
Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy2004
Dr Sarah Olsen
Professor Anthony O'Neill
Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode2004
Dr Sarah Olsen
Professor Anthony O'Neill
Temperature sensitivity of DC operation of sub-micron strained-Si MOSFETs2004
Dr Sarah Olsen
Professor Anthony O'Neill
Professor Steve Bull
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
et al.
Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices2004
Dr Sarah Olsen
Professor Anthony O'Neill
3D determination of a MOSFET gate morphology by FIB tomography2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Nebojsa Jankovic Professor
Dr Sarah Olsen
Luke Driscoll
et al.
A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics2003
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design2003
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design2003
Professor Anthony O'Neill
Dr Sarah Olsen
Design, Fabrication and Characterisation of Strained Si/SiGe MOSFETs2003
Dr Sarah Olsen
Professor Anthony O'Neill
Gate-oxide interface roughness analyses for oxidation on strained and unstrained vicinal Si surfaces by transmission electron microscopy2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture2003
Dr Sarah Olsen
Professor Anthony O'Neill
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
et al.
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Impact of virtual substrate Ge composition on strained Si MOSFET performance2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors2003
Dr Sarah Olsen
Professor Anthony O'Neill
Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs2003
Dr Sarah Olsen
Professor Anthony O'Neill
Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Jie Zhang
Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Luke Driscoll
Dr Kelvin Kwa
et al.
N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of channel thickness in strained Si/SiGe MOSFETs2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of channel thickness in strained Si/SiGe MOSFETs2003
Dr Sarah Olsen
Professor Anthony O'Neill
Professor Steve Bull
Effect of metal-oxide-semiconductor processing on the surface rouhness of strained Si/SiGe material2002
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the nanoscale roughness of advanced MOSFET layer structures2002
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the nanoscale roughness of advanced MOSFET layer structures2002
Dr Sarah Olsen
Professor Anthony O'Neill
Strained Si/SiGe n-channel MOSFETs: Impact of cross-hatching on device performance2002