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Browsing publications by Dr Suresh Uppal.

Newcastle AuthorsTitleYearFull text
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al.
Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures2007
Dr Suresh Uppal
Monte Carlo simulation of Boron implantation into (100) germanium2007
Dr Suresh Uppal
A study of boron implantation into high Ge content SiGe alloys2006
Professor Nick Cowern
Dr Suresh Uppal
Diffusion and activation of dopants in silicon and advanced silicon-based materials2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer2006
John Varzgar
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer2006
Dr Suresh Uppal
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation2006
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
Dr Suresh Uppal
An electrically driven mid-infrared solid-state modulator2005
Dr Suresh Uppal
An electrically driven solid state modulator2005
Dr Suresh Uppal
Design of an electrically operated mid-infrared solid-state modulator2005
Dr Suresh Uppal
Dr Jingyi Zhang
Arsenic diffusion in Si and Si0.9°Ge0.1 alloys: Effect of defect injection2004
Dr Suresh Uppal
Jingyi Zhang
Arsenic diffusion in Si and strained SixGe1-x alloys at 1000°C2004
Dr Suresh Uppal
Boron diffusion in High Ge content SiGe alloys2004
Dr Suresh Uppal
Dr Jun Zhang
Diffusion in sige: Defect injection studies in Sb, as and B2004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of boron in germanium at 800–900°C2004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of ion-implanted boron and silicon in germanium2004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of ion-implanted Boron and Silicon in Germanium2004
Dr Suresh Uppal
Dr Jingyi Zhang
Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.12004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of boron in germanium and Si1-xGex (x>50%) alloys2003
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of ion-implanted Boron in Germanium2001
Dr Suresh Uppal
Professor Nick Cowern
Ion-implantation and diffusion behaviour of boron in germanium2001
Dr Suresh Uppal
Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells2000