Browsing publications by Dr Mehdi Kanoun

Newcastle AuthorsTitleYearFull text
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage characteristics in strained Si MOSFETs2006
Dr Sarah Olsen
Dr Mehdi Kanoun
Mohamed Al-Areeki
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage in strained Si MOSFETs2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of Gate Leakage in Strained Si MOSFETs2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Professor Anthony O'Neill
Gate leakage mechanisms in strained Si devices2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer2006
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
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