Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness

  1. Lookup NU author(s)
  2. Dr Kelvin Kwa
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
  5. Dr Sanatan Chattopadhyay
  6. Goutan Dalapati
  7. Luke Driscoll
Author(s)Kwa KSK, Olsen SH, O'Neill AG, Chattopadhyay S, Dalapati G, Driscoll LS
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameProceedings of the Electronic Materials Conference
Conference LocationSanta Barbara, USA
Year of Conference2005
Date22-24 June 2005
Volume
Pages
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