Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices

  1. Lookup NU author(s)
  2. Dr Sanatan Chattopadhyay
  3. John Varzgar
  4. Dr Johan Seger
  5. Dr Yuk Tsang
  6. Dr Kelvin Kwa
  7. Dr Sarah Olsen
  8. Professor Anthony O'Neill
Author(s)Chattopadhyay S, Varzgar JB, Seger J, Tsang YL, Kwa KSK, Olsen SH, O'Neill AG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Conference on Electronic and Photonic Material, Devices and Systems (EPMDS 2006)
Conference LocationCalcutta, India
Year of Conference2006
Date4-6 January 2006
Volume
Pages
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