Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer

  1. Lookup NU author(s)
  2. John Varzgar
  3. Dr Sanatan Chattopadhyay
  4. Dr Suresh Uppal
  5. Dr Sarah Olsen
  6. Professor Anthony O'Neill
Author(s)Varzgar JB, Chattopadhyay S, Uppal S, Chandra P, Olsen SH, O'Neill AG
Publication type Conference Proceedings (inc. Abstract)
Conference NameEuropean Materials Research Society Conference (E-MRS)
Conference LocationNice, France
Year of Conference2006
Source Publication Date4-8 September 2006
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