Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer

  1. Lookup NU author(s)
  2. John Varzgar
  3. Dr Sanatan Chattopadhyay
  4. Dr Suresh Uppal
  5. Dr Sarah Olsen
  6. Professor Anthony O'Neill
Author(s)Varzgar JB, Chattopadhyay S, Uppal S, Chandra P, Olsen SH, O'Neill AG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameEuropean Materials Research Society Conference (E-MRS)
Conference LocationNice, France
Year of Conference2006
Date4-8 September 2006
Volume
Pages
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.