Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation

  1. Lookup NU author(s)
  2. Dr Suresh Uppal
  3. John Varzgar
  4. Dr Sanatan Chattopadhyay
  5. Dr Sarah Olsen
  6. Professor Anthony O'Neill
Author(s)Uppal S, Varzgar J, Chattopadhyay S, Olsen SH, O'Neill AG
Publication type Conference Proceedings (inc. Abstract)
Conference NameProceedings of the European Materials Research Society Conference (E-MRS)
Conference LocationNice, France
Year of Conference2006
Source Publication Date29 May - 2 June 2006
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.