Analysis of gate leakage characteristics in strained Si MOSFETs

  1. Lookup NU author(s)
  2. Liang Yan
  3. Dr Sarah Olsen
  4. Dr Mehdi Kanoun
  5. Rimoon Agaiby
  6. Goutan Dalapati
  7. Professor Anthony O'Neill
Author(s)Yan L, Olsen S, Kanoun M, Al-Araimi M, Agaiby R, Dalapati G, O'Neill A
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference Name210th ECS Meeting
Conference LocationCancun, Mexico
Year of Conference2006
Legacy Date29 October-3 November 2006
Volume
Pages
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PublisherThe Electrochemical Society
URLhttp://www.electrochem.org/meetings/biannual/210/210.htm
NotesAbstract 1501