Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

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  2. Dr Nick Bennett
  3. Professor Nick Cowern
Author(s)Bennett NS, Cowern NEB, Sealy BJ
Publication type Article
JournalApplied Physics Letters
Year2009
Volume94
Issue25
Pages
ISSN (print)0003-6951
ISSN (electronic)1077-3118
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PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.3159821
DOI10.1063/1.3159821
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