Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon
- Lookup NU author(s)
- Dr Nick Bennett
- Professor Nick Cowern
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| Author(s) | | Bennett NS, Cowern NEB, Sealy BJ |
| Publication type | | Article |
| Journal | | Applied Physics Letters |
| Year | | 2009 |
| Volume | | 94 |
| Issue | | 25 |
| Pages | | |
| ISSN (print) | | 0003-6951 |
| ISSN (electronic) | | 1077-3118 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | American Institute of Physics |
| URL | | http://dx.doi.org/10.1063/1.3159821 |
| DOI | | 10.1063/1.3159821 |
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