Comparison of parameter extraction techniques for SiC Schottky diodes

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  2. Ming-Hung Weng
  3. Dr Alton Horsfall
  4. Professor Nick Wright
  5. Irina Nikitina
Author(s)Weng MH, Horsfall AB, Wright NG, Vassilevski KV, Nikitina IP
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameSilicon Carbide 2006 - Materials, Processing and Devices
Conference LocationSan Francisco, CA
Year of Conference2006
Date17-21 April 2006
Volume911
Pages449-454
ISBN
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PublisherMaterials Research Society
URLhttp://www.mrs.org/s_mrs/sec_subscribe.asp?CID=6471&DID=175249&action=detail
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