1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

  1. Lookup NU author(s)
  2. Liang Yan
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
Author(s)Yan L, Simoen E, Olsen SH, Akheyar A, Claeys C, O'Neill AG
Publication type Article
JournalSolid-State Electronics
Year2009
Volume53
Issue11
Pages1177-1182
ISSN (print)0038-1101
ISSN (electronic)1879-2405
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2009.07.007
DOI10.1016/j.sse.2009.07.007
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