Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter

  1. Lookup NU author(s)
  2. Layi Alatise
  3. Dr Kelvin Kwa
  4. Dr Sarah Olsen
  5. Professor Anthony O'Neill
Author(s)Alatise OM, Kwa KSK, Olsen SH, O'Neill AG
Publication type Article
JournalIEEE Transactions on Electron Devices
Year2009
Volume56
Issue12
Pages3041-3048
ISSN (print)0018-9383
ISSN (electronic)1557-9646
Full text is available for this publication:
PublisherIEEE
URLhttp://dx.doi.org/10.1109/TED.2009.2030721
DOI10.1109/TED.2009.2030721
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