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Review of electrical characterisation of ultra-shallow junctions with micro four-point probes
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Dr Nick Bennett
Professor Nick Cowern
Petersen DH, Hansen O, Hansen TM, Boggild P, Lin R, Kjaer D, Nielsen PF, Clarysse T, Vandervorst W, Rosseel E, Bennett NS, Cowern NEB
Journal of Vacuum Science and Technology B.
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Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.
Part B. Microelectronics and Nanometer Structures
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