The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

  1. Lookup NU author(s)
  2. Layi Alatise
  3. Dr Kelvin Kwa
  4. Dr Sarah Olsen
  5. Professor Anthony O'Neill
Author(s)Alatise OM, Kwa KSK, Olsen SH, O'Neill AG
Publication type Article
JournalSolid-State Electronics
Year2010
Volume54
Issue3
Pages327-335
ISSN (print)0038-1101
ISSN (electronic)1879-2405
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PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2009.09.029
DOI10.1016/j.sse.2009.09.029
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