The High-Mobility Bended n-Channel Silicon Nanowire Transistor

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  2. Dr Piotr Dobrosz
  3. Dr Sarah Olsen
Author(s)Moselund KE, Najmzadeh M, Dobrosz P, Olsen SH, Bouvet D, De Michielis L, Pott V, Ionescu AM
Publication type Article
JournalIEEE Transactions on Electronic Devices
Year2010
Volume57
Issue4
Pages866-876
ISSN (print)0018-9383
ISSN (electronic)1557-9646
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PublisherIEEE
URLhttp://dx.doi.org/10.1109/TED.2010.2040939
DOI10.1109/TED.2010.2040939
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