Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
- Lookup NU author(s)
- Dr Piotr Dobrosz
- Dr Sarah Olsen
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| Author(s) | | Najmzadeh M, De Michielis L, Bouvet D, Dobrosz P, Olsen S, Ionescu AM |
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| Publication type | | Conference Proceedings (inc. Abstract) |
| Conference Name | | Microelectronic Engineering: 35th International Conference on Micro and Nano Engineering |
| Conference Location | | Ghent, Belgium |
| Year of Conference | | 2010 |
| Date | | 28 September - 1 October 2009 |
| Volume | | 87, 5-8 |
| Pages | | 1561-1565 |
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| ISBN | | 18735568 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Elsevier |
| URL | | http://dx.doi.org/10.1016/j.mee.2009.11.024 |
| DOI | | 10.1016/j.mee.2009.11.024 |
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| Library holdings | | Search Newcastle University Library for this item |
