Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

  1. Lookup NU author(s)
  2. Layi Alatise
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
Author(s)Alatise OM, Olsen SH, O'Neill AG
Publication type Article
JournalSolid State Electronics
Year2010
Volume54
Issue6
Pages628-634
ISSN (print)0038-1101
ISSN (electronic)1879-2405
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2009.12.036
DOI10.1016/j.sse.2009.12.036
Actions    Link to this publication
Share