Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

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  2. Layi Alatise
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
Author(s)Alatise OM, Olsen SH, O'Neill AG
Publication type Article
JournalSolid State Electronics
Year2010
Volume54
Issue6
Pages628-634
ISSN (print)0038-1101
ISSN (electronic)1879-2405
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PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2009.12.036
DOI10.1016/j.sse.2009.12.036
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