Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices

  1. Lookup NU author(s)
  2. Rouzet Agaiby
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
Author(s)Agaiby RMB, Olsen SH, Eneman G, Simoen E, Augendre E, O'Neill AG
Publication type Article
JournalIEEE Electron Device Letters
Year2010
Volume31
Issue5
Pages419-421
ISSN (print)0741-3106
ISSN (electronic)1558-0563
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PublisherIEEE
URLhttp://dx.doi.org/10.1109/LED.2010.2043496
DOI10.1109/LED.2010.2043496
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