Strained Si/SiGe MOS technology: Improving gate dielectric integrity

  1. Lookup NU author(s)
  2. Dr Sarah Olsen
  3. Liang Yan
  4. Dr Enrique Escobedo-Cousin
  5. Professor Anthony O'Neill
Author(s)Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellström PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC
Publication type Article
JournalMicroelectronic Engineering
Year2009
Volume86
Issue3
Pages218-223
ISSN (print)0167-9317
ISSN (electronic)1873-5568
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PublisherElsevier
URLhttp://dx.doi.org/10.1016/j.mee.2008.08.001
DOI10.1016/j.mee.2008.08.001
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