Analysis of Gate Leakage in Strained Si MOSFETs

  1. Lookup NU author(s)
  2. Liang Yan
  3. Dr Sarah Olsen
  4. Dr Mehdi Kanoun
  5. Rimoon Agaiby
  6. Goutan Dalapati
  7. Professor Anthony O'Neill
Author(s)Yan L, Olsen SH, Kanoun M, AlAraimi M, Agaiby R, Dalapati GK, ONeill AG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Conference LocationCancun, Mexico
Year of Conference2006
Date29th October - 3rd November
Volume3
Pages1001-1012
ISBN19386737
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherThe Electrochemical Society
URLhttp://dx.doi.org/10.1149/1.2355894
DOI10.1149/1.2355894
ActionsLink to this publication
Library holdingsSearch Newcastle University Library for this item