Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon

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  2. Dr Konstantin Vasilevskiy
  3. Irina Nikitina
  4. Dr Alton Horsfall
  5. Professor Nick Wright
Author(s)Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM
Editor(s)Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T
Publication type Conference Proceedings (inc. Abstract)
Conference Name13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009)
Conference LocationNurnberg, Germany
Year of Conference2010
Legacy Date11-16 October 2009
Volume645-648
Pages589-592
ISBN14226375
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PublisherMaterials Science Forum: Trans Tech Publications Ltd
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.589
DOI10.4028/www.scientific.net/MSF.645-648.589
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