4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

  1. Lookup NU author(s)
  2. Dr Konstantin Vasilevskiy
  3. Irina Nikitina
  4. Dr Alton Horsfall
  5. Professor Nick Wright
  6. Dr Christopher Johnson
Author(s)Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM
Editor(s)Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T
Publication type Conference Proceedings (inc. Abstract)
Conference Name13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009)
Conference LocationNurnberg, Germany
Year of Conference2010
Date11-16 October 2009
Volume645-648
Pages897-900
ISBN14226375
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PublisherMaterials Science Forum: Trans Tech Publications Ltd
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.897
DOI10.4028/www.scientific.net/MSF.645-648.897
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