4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
- Lookup NU author(s)
- Dr Konstantin Vasilevskiy
- Irina Nikitina
- Dr Alton Horsfall
- Professor Nick Wright
- Dr Christopher Johnson
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| Author(s) | | Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM |
| Editor(s) | | Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T |
| Publication type | | Conference Proceedings (inc. Abstract) |
| Conference Name | | 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009) |
| Conference Location | | Nurnberg, Germany |
| Year of Conference | | 2010 |
| Date | | 11-16 October 2009 |
| Volume | | 645-648 |
| Pages | | 897-900 |
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| ISBN | | 14226375 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Materials Science Forum: Trans Tech Publications Ltd |
| URL | | http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.897 |
| DOI | | 10.4028/www.scientific.net/MSF.645-648.897 |
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