Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks

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  2. Layi Alatise
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
Author(s)Alatise OM, Olsen SH, O'Neill AG, Majhi P
Publication type Article
JournalMicroelectronic Engineering
Year2010
Volume87
Issue11
Pages2196-2199
ISSN (print)0167-9317
ISSN (electronic)1873-5568
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PublisherElsevier BV
URLhttp://dx.doi.org/10.1016/j.mee.2010.02.002
DOI10.1016/j.mee.2010.02.002
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