Post metallization annealing characterization of interface properties of high-K dielectrics stack on silicon carbide

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  2. Ming-Hung Weng
  3. Dr Rajat Mahapatra
  4. Professor Nick Wright
  5. Dr Alton Horsfall
Author(s)Weng MH, Mahapatra R, Wright NG, Horsfall AB
Editor(s)Suzuki, A., Okumura, H., Kimoto, T., Fuyuki, T., Fukuda, K., Nishizawa, S.
Publication type Conference Proceedings (inc. Abstract)
Conference Name12th International Conference on Silicon Carbide and Related Materials (ICSCRM 2007)
Conference LocationOtsu, Japan
Year of Conference2009
Date14-19 October 2007
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PublisherMaterials Science Forum: Trans Tech Publications Ltd
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