Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
- Lookup NU author(s)
- Dr Piotr Dobrosz
- Dr Sarah Olsen
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| Author(s) | | Najmzadeh M, De Michielis L, Bouvet D, Dobrosz P, Olsen S, Ionescu A |
| Publication type | | Article |
| Journal | | Microelectronic Engineering |
| Year | | 2010 |
| Volume | | 87 |
| Issue | | 5-8 |
| Pages | | 1561-1565 |
| ISSN (print) | | 0167-9317 |
| ISSN (electronic) | | 1873-5568 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Elsevier BV |
| URL | | http://dx.doi.org/10.1016/j.mee.2009.11.024 |
| DOI | | 10.1016/j.mee.2009.11.024 |
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