Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

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  2. Dr Piotr Dobrosz
  3. Dr Sarah Olsen
Author(s)Najmzadeh M, De Michielis L, Bouvet D, Dobrosz P, Olsen S, Ionescu A
Publication type Article
JournalMicroelectronic Engineering
Year2010
Volume87
Issue5-8
Pages1561-1565
ISSN (print)0167-9317
ISSN (electronic)1873-5568
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PublisherElsevier BV
URLhttp://dx.doi.org/10.1016/j.mee.2009.11.024
DOI10.1016/j.mee.2009.11.024
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