Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs

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  2. Professor Nick Cowern
  3. Dr Nick Bennett
  4. Dr Chihak Ahn
  5. Dr Joo Chul Yoon
Author(s)Bazizi EM, Fazzini PF, Cristiano F, Pakfar A, Tavernier C, Payet F, Skotnicki T, Zechner C, Zographos N, Matveev D, Cowern NEB, Bennett N, Ahn C, Yoon JC
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Electron Device Meeting
Conference LocationSan Francisco, California, USA
Year of Conference2010
Legacy Date6-8 December 2010
Volume
Pages15.1.1-15.1.4
ISBN9781442474185
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Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.
PublisherIEEE
URLhttp://dx.doi.org/10.1109/IEDM.2010.5703365
DOI10.1109/IEDM.2010.5703365
NotesOnline ISBN: 9781424474196
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