Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling

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  2. Dr Jose Coutinho
  3. Professor Patrick Briddon
Author(s)Markevich V, Peaker A, Lastovskii S, Murin L, Coutinho J, Torres V, Briddon P, Dobaczewski L, Monakhov E, Svensson B
Publication type Article
JournalPhysical Review B: Condensed Matter and Materials Physics
Year2009
Volume80
Issue23
Pages
ISSN (print)1098-0121
ISSN (electronic)1550-235X
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PublisherAmerican Physical Society
URLhttp://dx.doi.org/10.1103/PhysRevB.80.235207
DOI10.1103/PhysRevB.80.235207
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