Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

  1. Lookup NU author(s)
  2. Dr Piotr Dobrosz
  3. Dr Sarah Olsen
  4. Professor Anthony O'Neill
Author(s)De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Conference LocationHsinchu, Taiwan
Year of Conference2009
Date27-29 April 2009
Volume
Pages119-120
ISBN9781424427857
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PublisherIEEE
URLhttp://dx.doi.org/10.1109/VTSA.2009.5159319
DOI10.1109/VTSA.2009.5159319
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