6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers

  1. Lookup NU author(s)
  2. Dr Konstantin Vasilevskiy
  3. Irina Nikitina
  4. Dr Alton Horsfall
  5. Professor Nick Wright
  6. Dr Christopher Johnson
Author(s)Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C
Editor(s)Bauer, A.J., Friedrichs, P., Krieger, M., Pensl, G., Rupp, R., Seyller, T.
Publication type Conference Proceedings (inc. Abstract)
Conference NameMaterials Science Forum: Silicon Carbide and Related Materials
Conference LocationNürnberg, Germany
Year of Conference2010
Date11-16 October 2010
Volume645-6648
Pages897-900
02555476
ISBN0878492798
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PublisherTrans Tech Publications Ltd.
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.897
DOI10.4028/www.scientific.net/MSF.645-648.897
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