6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers

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  2. Dr Konstantin Vasilevskiy
  3. Irina Nikitina
  4. Dr Alton Horsfall
  5. Professor Nick Wright
  6. Dr Christopher Johnson
Author(s)Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C
Editor(s)Bauer, A.J., Friedrichs, P., Krieger, M., Pensl, G., Rupp, R., Seyller, T.
Publication type Conference Proceedings (inc. Abstract)
Conference NameMaterials Science Forum: Silicon Carbide and Related Materials
Conference LocationNürnberg, Germany
Year of Conference2010
Date11-16 October 2010
Volume645-6648
Pages897-900
02555476
ISBN0878492798
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PublisherTrans Tech Publications Ltd.
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.897
DOI10.4028/www.scientific.net/MSF.645-648.897
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