Recovery of Ohmic Contacts Formed on C-face 4H-SiC Following High Temperature Post-Processing

  1. Lookup NU author(s)
  2. Benjamin Furnival
  3. Dr Konstantin Vasilevskiy
  4. Professor Nick Wright
  5. Dr Alton Horsfall
Author(s)Furnival BJD, Vassilevski K, Wright NG, Horsfall AB
Editor(s)Monakhov, E.V., Hornos, T., Svensson, B.G.
Publication type Conference Proceedings (inc. Abstract)
Conference NameMaterials Science Forum: 8th European Conference on Silicon Carbide and Related Materials
Conference LocationOslo, Norway
Year of Conference2011
Legacy Date29 August - 2 September 2010
Volume679-680
Pages469-472
0255-5476
ISBN
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PublisherTrans Tech Publications Ltd.
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.469
DOI10.4028/www.scientific.net/MSF.679-680.469
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