Browse by author
Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon, Dr Venkata Nagareddy, Professor Nick Wright, Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Epitaxial graphene produced from SiC substrates exhibits a carrier mobility reduction thought to arise from intercalated silicon. We present the results of density functional simulations and show that individual silicon atoms are highly mobile on and between graphene sheets, suggesting that thermally stable structures involving individual Si impurities are likely to result from the interaction of silicon with defects in the graphene sheets.
Author(s): Goss JP, Briddon PR, Nagareddy VK, Wright NG, Horsfall AB, Caldwell JD, Gaskill DK, Jernigan GG
Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2011
Pages: 793-796
ISSN: 0255-5476 (print) 1422-6375 (online)
Publisher: Trans Tech Publications Ltd.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.793
DOI: 10.4028/www.scientific.net/MSF.679-680.793
Library holdings: Search Newcastle University Library for this item
ISBN:
