Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

  1. Lookup NU author(s)
  2. Raman Kapoor
  3. Dr Enrique Escobedo-Cousin
  4. Dr Sarah Olsen
  5. Professor Steve Bull
Author(s)Kapoor R, Escobedo-Cousin E, Olsen SH, Bull SJ
Publication type Article
JournalIEEE Transactions on Electron Devices
Year2011
Volume58
Issue11
Pages4016-4023
ISSN (print)0018-9383
ISSN (electronic)
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PublisherInstitution of Electronic and Electrical Engineers
URLhttp://dx.doi.org/10.1109/TED.2011.2164250
DOI10.1109/TED.2011.2164250
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