Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal-Insulator-Metal Devices

  1. Lookup NU author(s)
  2. Dr Rajat Mahapatra
  3. Dr Alton Horsfall
  4. Professor Nick Wright
Author(s)Mahapatra R, Horsfall AB, Wright NG
Publication type Article
JournalJournal of Electronic Materials
Year2012
Volume41
Issue4
Pages656-659
ISSN (print)0361-5235
ISSN (electronic)1543-186X
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherSpringer New York LLC
URLhttp://dx.doi.org/10.1007/s11664-012-1912-1
DOI10.1007/s11664-012-1912-1
Actions    Link to this publication