Reconfigurations and diffusion of trivacancy in silicon

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  2. Dr Jose Coutinho
  3. Mark Rayson
  4. Professor Patrick Briddon
Author(s)Markevich VP, Peaker AR, Hamilton B, Lastovskii SB, Murin LI, Coutinho J, Markevich AV, Rayson MJ, Briddon PR, Svensson BG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference Name26th International Conference on Defects in Semiconductors (ICDS)
Conference LocationNelson, New Zealand
Year of Conference2012
Legacy Date18-22 July 2011
Volume407 (15)
Pages2974-2977
Series TitlePhysica B: Condensed Matter
0921-4526
ISBN18732135
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherElsevier BV
URLhttp://dx.doi.org/10.1016/j.physb.2011.08.001
DOI10.1016/j.physb.2011.08.001
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