A density functional study of iron segregation at ISFs and Sigma-5-(001) GBs in mc-Si

  1. Lookup NU author(s)
  2. Oras Al-Ani
  3. Dr Jon Goss
  4. Professor Nick Cowern
  5. Professor Patrick Briddon
  6. Meaad Al-Hadidi
  7. Raied Al-Hamadany
  8. Dr Mark Rayson
Author(s)Al-Ani OA, Goss JP, Cowern NEB, Briddon PR, Al-Hadidi M, Al-Hamadany R, Rayson MJ
Publication type Article
JournalSolid State Phenomena
Year2016
Volume242
Issue
Pages224-229
ISSN (print)1012-0394
ISSN (electronic)1662-9779
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Removal of the dilaterous effects of iron in silicon is critical for the performance of multicrystalline silicon (mc-Si) solar cells, with internal gettering at extended defects including stacking faults and grain boundaries being one possibility. We present the results of a dehttp://dx.doi.org/10.4028/www.scientific.net/SSP.242.224nsity function study of the behaviour of iron at the intrinsic stacking fault and (001)-Σ5 twist grain boundary, which both represent examples of fully bonded systems. Our results show iron is bound more strongly to the grain-boundary than the stacking fault, which we ascribe to a combination of Si-Fe chemistry and strain relaxation. However, we find that the binding energy of a single Fe atom to these extended defects is modest, and less than 0.5 eV.
PublisherTrans Tech Publications
URLhttp://dx.doi.org/10.4028/www.scientific.net/SSP.242.224
DOI10.4028/www.scientific.net/SSP.242.224
Actions    Link to this publication

Altmetrics provided by Altmetric

Share