4H-SiC Schottky diode arrays for X-ray detection

  1. Lookup NU author(s)
  2. Dr Hua Khee Chan
  3. Professor Nick Wright
  4. Dr Alton Horsfall
  5. Dr Alicia Barnett
Author(s)Lioliou G, Chan HK, Gohil T, Vassilevski KV, Wright NG, Horsfall AB, Barnett AM
Publication type Article
JournalNuclear Instruments and Methods in Physics Research A
ISSN (print)0168-9002
ISSN (electronic)1872-9576
Full text is available for this publication:
Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20 °C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2 × 2 or 1 × 3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm2 at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 keV to 1.68 keV among different diodes.
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