Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

  1. Lookup NU author(s)
  2. Idzdihar Idris
  3. Dr Hua Khee Chan
  4. Professor Nick Wright
  5. Dr Alton Horsfall
Author(s)Idris MI, Weng MH, Chan HK, Murphy AE, Clark DT, Young RAR, Ramsay EP, Wright NG, Horsfall AB
Publication type Article
JournalJournal of Applied Physics
Year2016
Volume120
Issue
Pages
ISSN (print)0021-8979
ISSN (electronic)1089-7550
The full text of this item is currently under embargo and cannot be made publicly available until 05/12/2017.
PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.4969050
DOI10.1063/1.4969050
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