On electrons mobility in heavily nitrogen doped 4H-SiC

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  2. Dr Konstantin Vasilevskiy
  3. Sandip Roy
  4. Neal Wood
  5. Dr Alton Horsfall
  6. Professor Nick Wright
Author(s)Vasilevskiy KV, Roy SK, Wood N, Horsfall AB, Wright NG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference Name11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)
Conference LocationHalkdiki, Greece
Year of Conference2017
Source Publication Date2017
Volume897 MSF
Pages254-257
Series TitleMaterials Science Forum
0255-5476
ISBN9783035710434
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PublisherTrans Tech Publications Ltd
URLhttps://doi.org/10.4028/www.scientific.net/MSF.897.254
DOI10.4028/www.scientific.net/MSF.897.254
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