Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors

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  2. Idzdihar Idris
  3. Dr Ming-Hung Weng
  4. Dr Hua Khee Chan
  5. Professor Nick Wright
  6. Dr Alton Horsfall
Author(s)Idris MI, Weng MH, Chan H-K, Murphy AE, Smith DA, Young RAR, Ramsay EP, Clark DT, Wright NG, Horsfall AB
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference Name11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)
Conference LocationHalkidiki, Greece
Year of Conference2017
Source Publication Date2017
Volume897 MSF
Pages513-516
Series TitleMaterials Science Forum
0255-5476
ISBN9783035710434
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PublisherTrans Tech Publications Ltd
URLhttps://doi.org/10.4028/www.scientific.net/MSF.897.513
DOI10.4028/www.scientific.net/MSF.897.513
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