Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon

  1. Lookup NU author(s)
  2. Dr Chihak Ahn
  3. Dr Nick Bennett
  4. Professor Nick Cowern
Author(s)Ahn C, Bennett N, Dunham ST, Cowern NEB
Publication type Article
JournalPhysical Review B
ISSN (print)1098-0121
ISSN (electronic)1550-235X
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
We present a general theory of stress effects on the solid solubility of impurities in crystalline materials, including the effects of ionization and the Fermi level in semiconductors. Critical errors and limitations in previously proposed theory are discussed, and a rigorous accurate treatment incorporating charge-carrier induced lattice strain and correct statistics is presented. Considering all contributing effects, we find that the strain compensation energy is the primary contribution to solubility enhancement in essentially all material systems of interest. An exception is the case of low-solubility charged impurities in semiconductors, where a Fermi-level contribution is also found. We present explicit calculations for a range of dopant impurities in Si, utilizing this system as a model example and vehicle for comparison with experiment. Our results agree closely with experimental solubilities for dopants with widely different ionic sizes.
PublisherAmerican Physical Society
NotesArticle no. 073201 4 pages
Actions    Link to this publication

Altmetrics provided by Altmetric