Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

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  2. Liang Yan
  3. Dr Sarah Olsen
  4. Dr Enrique Escobedo-Cousin
  5. Professor Anthony O'Neill
Author(s)Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG
Publication type Article
JournalJournal of Applied Physics
Year2008
Volume103
Issue9
Pages
ISSN (print)0021-8979
ISSN (electronic)1520-8850
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PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.2917286
DOI10.1063/1.2917286
NotesArticle no. 094508 10 pages
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