Dopant ion implantation simulations in 4H-Silicon Carbide

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Author(s)Phelps GJ
Publication type Article
JournalModelling and Simulation in Materials Science and Engineering
Year2004
Volume12
Issue6
Pages1139-1146
ISSN (print)0965-0393
ISSN (electronic)1361-651X
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PublisherInstitute of Physics Publishing Ltd.
URLhttp://dx.doi.org/10.1088/0965-0393/12/6/008
DOI10.1088/0965-0393/12/6/008
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