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Dopant ion implantation simulations in 4H-Silicon Carbide

Lookup NU author(s): Dr Gordon Phelps

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Author(s): Phelps GJ

Publication type: Article

Publication status: Published

Journal: Modelling and Simulation in Materials Science and Engineering

Year: 2004

Volume: 12

Issue: 6

Pages: 1139-1146

ISSN (print): 0965-0393

ISSN (electronic): 1361-651X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0965-0393/12/6/008

DOI: 10.1088/0965-0393/12/6/008

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