Dopant ion implantation simulations in 4H-Silicon Carbide
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- Dr Gordon Phelps
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| Author(s) | | Phelps GJ |
| Publication type | | Article |
| Journal | | Modelling and Simulation in Materials Science and Engineering |
| Year | | 2004 |
| Volume | | 12 |
| Issue | | 6 |
| Pages | | 1139-1146 |
| ISSN (print) | | 0965-0393 |
| ISSN (electronic) | | 1361-651X |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Institute of Physics Publishing Ltd. |
| URL | | http://dx.doi.org/10.1088/0965-0393/12/6/008 |
| DOI | | 10.1088/0965-0393/12/6/008 |
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