Effect of annealing on interface state density of Ni-silicided/Si 1-xGex Schottky diode
- Lookup NU author(s)
- Arup Saha
- Dr Sanatan Chattopadhyay
- Goutan Dalapati
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| Author(s) | | Saha AR, Chattopadhyay S, Dalapati GK, Bose C, Maiti CK |
| Publication type | | Article |
| Journal | | Materials Science in Semiconductor Processing |
| Year | | 2005 |
| Volume | | 8 |
| Issue | | 1-3 |
| Pages | | 249-253 |
| ISSN (print) | | 1369-8001 |
| ISSN (electronic) | | 1873-4081 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Nickel-silicided/Si1-xGex Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75Ge0.25 layer at a temperature range of 300-900degreesC for 60s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains, formed during annealing. Schottky barrier height (PhiB) of the silicided diodes was extracted from forward current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The forward I-V characteristics were also simulated for understanding the influence of interfacial layer present at the silicide and Si0.75Ge0.25 interface. The capacitance-voltage method was used to determine the energy distribution of the interface state density (Dit) and was found to decrease with increasing energy from the valence band edge. [All rights reserved Elsevier] (16 References). |
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| Publisher | | Pergamon |
| URL | | http://dx.doi.org/10.1016/j.mssp.2004.09.042 |
| DOI | | 10.1016/j.mssp.2004.09.042 |
| Notes | | Journal issue: Proceedings of the Second International SiGe Technology and Device Meeting (ISTDM 2004) Kleist-Forum, Frankfurt (Oder), Germany, 16-19 May, 2004 |
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