Effect of annealing on interface state density of Ni-silicided/Si 1-xGex Schottky diode

  1. Lookup NU author(s)
  2. Arup Saha
  3. Dr Sanatan Chattopadhyay
  4. Goutan Dalapati
Author(s)Saha AR, Chattopadhyay S, Dalapati GK, Bose C, Maiti CK
Publication type Article
JournalMaterials Science in Semiconductor Processing
Year2005
Volume8
Issue1-3
Pages249-253
ISSN (print)1369-8001
ISSN (electronic)1873-4081
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Nickel-silicided/Si1-xGex Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75Ge0.25 layer at a temperature range of 300-900degreesC for 60s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains, formed during annealing. Schottky barrier height (PhiB) of the silicided diodes was extracted from forward current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The forward I-V characteristics were also simulated for understanding the influence of interfacial layer present at the silicide and Si0.75Ge0.25 interface. The capacitance-voltage method was used to determine the energy distribution of the interface state density (Dit) and was found to decrease with increasing energy from the valence band edge. [All rights reserved Elsevier] (16 References).
PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.mssp.2004.09.042
DOI10.1016/j.mssp.2004.09.042
NotesJournal issue: Proceedings of the Second International SiGe Technology and Device Meeting (ISTDM 2004) Kleist-Forum, Frankfurt (Oder), Germany, 16-19 May, 2004
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