Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor

  1. Lookup NU author(s)
  2. Dr Sylvie Ortolland
  3. Professor Nick Wright
  4. Dr Christopher Johnson
Author(s)Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ
Publication type Article
JournalMaterials Science Forum
Year2001
Volume353-356
Issue
Pages567-570
ISSN (print)02555476
ISSN (electronic)
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherTrans Tech Publications Ltd
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.567
DOI10.4028/www.scientific.net/MSF.353-356.567
NotesOriginally presented at: the Third European Conference on Silicon Carbide and Related Materials (ECSCRM2000), held September 3-7, 2000 in Kloster Banz, Germany
Actions    Link to this publication
Share