Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor
- Lookup NU author(s)
- Dr Sylvie Ortolland
- Professor Nick Wright
- Dr Christopher Johnson
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| Author(s) | | Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ |
| Publication type | | Article |
| Journal | | Materials Science Forum |
| Year | | 2001 |
| Volume | | 353-356 |
| Issue | | |
| Pages | | 567-570 |
| ISSN (print) | | 02555476 |
| ISSN (electronic) | | |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Trans Tech Publications Ltd |
| URL | | http://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.567 |
| DOI | | 10.4028/www.scientific.net/MSF.353-356.567 |
| Notes | | Originally presented at: the Third European Conference on Silicon Carbide and Related Materials (ECSCRM2000), held September 3-7, 2000 in Kloster Banz, Germany |
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